Cowin Semiconductor Material Ningbo CO.,LTD.

6N Copper Sputtering Target

6N Copper Sputtering Target

高纯铜靶材High-purity Copper Targets

描述/ Description 

光微半导体采用独家设计的水冷铜坩埚磁悬浮熔炼炉子和IPAS 半导体靶材加工技术生产的高纯铜靶材,拥有高度均匀的材料结构,平均尺寸小于1微米,更高的材质硬度,更少的杂质颗粒,更优的织构均匀性。主要用于半导体产业的芯片制造利用PVD工艺在晶圆上沉积形成导电层IPAS系列工艺的产品,可有效提高晶圆的薄膜质量、溅射速率、成品率,使用寿命可达3600KWH以上,是传统工艺铜靶材使用寿命的1倍以上,产品主要参数全球领先,打破国外在铜系列先进靶材的垄断格局,是先进芯片国产化的核心材料之一。

By using designed exclusively water-cooled crucible maglev melting furnace and IPAS technology , Cowin Semicon is producing high-purity copper target which has uniform structure with average size less than 1 micron, higher material hardness and less impurity particles.

Copper targets is sputtered into conductive layer on the wafer by using PVD process. Our products with IPAS technology is effectively improving the film quality, sputtering rate and yield of wafers.  Materials lifetime can reach more than 3600KWH which is twice times compared with the targets  in traditional processes. The main parameters of the products are in good control.

规格 Specs

 

 

名称Targets

纯度Purity

晶粒Grain Size

偏析度Segregation Degree

8 inch

12 inch

1

Cu target

5N/6N

<1um

N/A

Release

Release

2

CuAl target

6N

<1um

5%

Release

Release

3

CuMn target

6N

<1um

5%

Release

Release

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